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DMG4468LK3
3.0
2.5
10,000
2.0
1,000
T A = 150°C
1.5
1.0
I D = 1mA
I D = 250μA
100
T A = 125°C
10
T A = 85°C
0.5
T A = 25°C
0
1
-50
-25
0
25 50 75
100 125 150
0
5
10 15 20 25 30
T A , AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
20
18
V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 8 Typical Drain-Source Leakage Current vs Voltage
1,000
16
14
12
10
T A = 25°C
100
8
6
4
10
T A = 85°C
T A = 125°C
T A = -55°C
T A = 150°C
T A = 25°C
2
0
0.2
0.4 0.6 0.8 1.0
1.2
1
2
4
6 8
10 12 14 16 18 20
1,000
V SD , SOURCE-DRAIN VOLTAGE (V)
Fig. 9 Diode Forward Voltage vs. Current
100
V GS , GATE SOURCE VOLTAGE(V)
Fig. 10 Gate-Source Leakage Current vs. Voltage
90
80
Single Pulse
R θ JA = 77°C/W
R θ JA (t) = R θ JA * r(t)
T J - T A = P * R θ JA (t)
100
70
60
50
T A = 125°C
T A = 150°C
40
10
T A = 85°C
30
T A = -55°C
T A = 25°C
20
10
1
2 4 6 8 10 12 14 16 18 20
V GS , GATE SOURCE VOLTAGE(V)
Fig. 11 Gate-Source Leakage Current vs. Voltage
0
0.0001 0.001 0.01 0.1 1 10 100 1,000
t 1 , PULSE DURATION TIME (s)
Fig. 12 Single Pulse Maximum Power Dissipation
DMG4468LK3
Document number: DS31958 Rev. 3 - 2
4 of 6
www.diodes.com
June 2013
? Diodes Incorporated
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